The electrodeposition of silicon was engaged in propylene carbonate containing SiCl4 and tetrabutylammonium chloride. Cyclic voltammograms showed the possibility of electrodeposition of Si at -3.6 V versus Pt quasi-R.E. Potentiostatic electrolysis yielded a porous and white deposit with the thickness of 50 mu m at -3.6 V for I h. Raman spectroscopic analysis of the deposit immersed in pure propylene carbonate soon after the electrolysis confirmed that the electrodeposit was amorphous silicon. Moreover, EDX and XPS results indicated that the electrodeposited Si was so active that it was oxidized immediately in the air. Finally, the electrodeposition process of Si film is discussed based on chronopotentiometry and chronoamperometry. (C) 2007 Elsevier Ltd. All rights reserved.