The reaction of Me(3)ln and ROH (R = CH2CH2NMe2, CH(CH3)CH2NMe2, C(CH3)(2)CH2OMe, CH2CH2OMe) in toluene under aerosol assisted chemical vapor deposition (AACVD) conditions leads to the production of indium oxide thin films on glass. The indium oxide films were deposited at 550 degrees C and analyzed by scanning electron microscopy (SEM), X-ray powder diffraction, wavelength dispersive analysis of X-rays (WDX), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. This CVD technique offers a rapid, convenient route to In2O3, which presumably involves the in situ formation of dimethylindium alkoxides, of the type [Me2InOR](2). In order to identify compounds present in the aerosol mist, the solution-phase reaction between Me(3)ln and ROH (R = CH2CH2NMe2, C(CH3)(2)CH2OMe, CH(CH3)CH2NMe2, CH(CH2NMe2)(2)) at room temperature in toluene was carried out. Dimeric indium alkoxides, of the type [Me2In(OR)](2), were isolated, and their structures were determined by X-ray crystallography.