Advanced Materials, Vol.19, No.21, 3469-3469, 2007
Guided formation of a sub-10 nm silicide dot array on an area patterned by electron-beam lithography
A method for forming sub-10 nm silicide dots is reported. Crystalline Pd2Si dots with a diameter of approximately 8 nm are formed on a pattern with a scale of a few tens of nanometers defined by electron-beam lithography (see figure, scale bar is 200 nm).