Organic light emitting bistable memory device with Cs doped electron transport layer

Kyoung Soo Yook; Soon Ok Jeon; Chul Woong Joo; Jun Yeob Lee

Journal of Industrial and Engineering Chemistry, Vol.15, No.3, 328-330, May, 2009

DOI10.1016/j.jiec.2008.11.015 Export Citation

Organic light emitting bistable memory device with Cs doped electron transport layer

Kyoung Soo Yook, Soon Ok Jeon, Chul Woong Joo, and Jun Yeob Lee^†

Department of Polymer Science and Engineering, Dankook University, Jukjeon-dong, Suji-gu, Yongin-si, Gyeonggi-do, 448-701, Republic of Korea

E-mail:

Dual functional organic light emitting bistable memory devices (OLEBDs) were developed by using a Cs doped electron transport layer. Bistability was exhibited by Cs doping in 4,7-diphenyl-1,10-phenanthroline (Bphen) and the driving voltage was lowered by alkali metal doping. n-type doping effect of Cs with Bphen induced the electrical switching behavior in OLEBDs and a low driving voltage. A high on/off ratio over 1000 could be obtained in Cs doped OLEBDs and it was kept stable during multicycle measurements. OLEBDs showed superior performances both as a memory and a light emitting device.

Keywords:Organic light emitting memory;Cs doping;Dual function device

[References]

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Oyamada T, Tanaka H, Matsushige K, Sasabe H, Adachi C, Appl. Phys. Lett., 83, 1252 (2003)
Lee IS, Kim SJ, Kwak YW, Choi MC, Park JW, Ha CS, J. Ind. Eng. Chem., 14(3), 344 (2008)
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[Referenced By]

[1] Yang C, Cho T, Lin C, Wu C, Appl. Phys. Lett., 90, 173507 (2007)

[2] Pandey AK, Nunzi JM, Adv. Mater., 19(21), 3613 (2007)

[3] Hepp A, Heil H, Weise W, Ahles M, Schmechel R, von Seggern H, Phys. Rev. Lett., 91, 157406 (2003)

[4] Sakanoue T, Fujiwara E, Yamada R, Tada H, Appl. Phys. Lett., 84, 3037 (2004)

[5] Sakanoue T, Fujiwara E, Yamada R, Tada H, Chem. Lett., 34(4), 494 (2005)

[6] Oyamada T, Uchiuzou H, Akiyama S, Oku Y, Shimoji N, Matsushige K, Sasabe H, Adachi C, J. Appl. Phys., 98, 074506 (2005)

[7] Santato C, Cicoira F, Cosseddu P, Bonfiglio A, Bellutti P, Muccini M, Zamboni R, Rosei F, Mantoux A, Doppelt P, Appl. Phys. Lett., 88, 163511 (2006)

[8] Tseng RJ, Ouyang J, Chu C, Huang J, Yang Y, Appl. Phys. Lett., 88, 123506 (2006)

[9] Quyang J, Chu C, Szmanda CR, Ma L, Yang Y, Nat. Mater., 3, 918 (2003)

[10] Bozano LD, Kean BW, Beinhoff M, Carter KR, Rice PM, Scott JC, Adv. Funct. Mater., 15(12), 1933 (2005)

[11] Yang Y, Ouyang J, Ma LP, Tseng RJH, Chu CW, Adv. Funct. Mater., 16(8), 1001 (2006)

[12] Tseng RJ, Huang J, Quyang J, Kaner RB, Yang Y, Nano Lett., 5, 1077 (2005)

[13] Quyang J, Chu C, Sieves D, Yang Y, Appl. Phys. Lett., 86, 123507 (2005)

[14] Prakash A, Quyang J, Lin J, Yang Y, J. Appl. Phys., 100, 054309 (2006)

[15] Wang HP, Pigeon S, Izquierdo R, Martel R, Appl. Phys. Lett., 89, 183502 (2006)

[16] Tu C, Kwong D, Lai Y, Appl. Phys. Lett., 89, 252107 (2006)

[17] Huang J, Pfeiffer M, Werner A, Blochwitz J, Leo K, Appl. Phys. Lett., 80, 139 (2002)

[18] Pfeiffer M, Forrest SR, Leo K, Thompson ME, Adv. Mater., 14(22), 1633 (2002)

[19] Huang J, Blochwitz-Nimoth J, Pfeiffer M, Leo K, J. Appl. Phys., 93, 838 (2003)

[20] Oyamada T, Sasabe H, Adachi C, Murase S, Tominaga T, Maeda C, Appl. Phys. Lett., 86, 033503 (2005)

[21] Oyamada T, Tanaka H, Matsushige K, Sasabe H, Adachi C, Appl. Phys. Lett., 83, 1252 (2003)

[22] Lee IS, Kim SJ, Kwak YW, Choi MC, Park JW, Ha CS, J. Ind. Eng. Chem., 14(3), 344 (2008)

[23] Oh SY, Lee CH, Ryu SH, Oh HS, J. Ind. Eng. Chem., 12(1), 69 (2006)

[24] Lee JY, J. Ind. Eng. Chem., 14(5), 676 (2008)