A solution-based process was suggested for preparing a CulnS2 thin film deposited on a glass substrate, which can be applied to the absorber of chalcogenide -type photovoltaics. Chemical bath deposition (CBO) was adopted with various deposition temperatures and time periods, and we found that they can cause different film thicknesses and band-gap energies of films prepared. We proved that the film prepared with specific condition of CBO (70 ℃ for 2 h) was not only mechanically robust but also showed feasible absorption pattern for both visible light and near infra-red.