CaCu3Ti4O12 (CCTO) thin film was prepared on LaNiO3 (LNO)-coated silicon substrate by a sol-gel process. The CCTO sample is perovskite structure without any detectable impurities. Compared with the films grown on platinum (Pt), the CCTO thin film on LNO exhibits the (4 0 0) preferential orientation. It may be due to the LNO acts as seed layer during the growth of the CCTO film. It is indicated that the dielectric loss of CCTO thin film on LNO is lower than that of the films on Pt. The dielectric response of CCTO thin film on LNO can be described with the Debye relaxation model subjoining the contribution of conductance and diffusion effect. (C) 2007 Elsevier B.V. All rights reserved.