화학공학소재연구정보센터
Journal of Crystal Growth, Vol.310, No.3, 575-578, 2008
Preparation, microstructure and electrical properties of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) films on different epitaxial bottom electrodes buffered Si substrates
Completely (001)-oriented 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMNT) films were successfully prepared on different epitaxial bottom electrodes buffered Si substrates. On Ir electrode, the dielectric constant and remnant polarization of the PMNT film are 900 and 8.7 mu C/cm(2), respectively. Nevertheless, using the La0.5Sr0.5CoO3 (LSCO) electrode, the corresponding values can increase to 1650 and 15 mu C/cm(2). Larger grains and less residual tensile stress of the film prepared on the LSCO electrode were found to be responsible for such improvements. (C) 2007 Elsevier B.V. All rights reserved.