The material properties of junctions formed by implanting ultralow energy octadecaborane (B18H22+) followed by spike and flash annealings are reported. Along with providing significant drift mode beam current improvements at sub-1-keV energies, the B18H22 implants form an amorphous layer due to the large mass of the material. The authors have found that the thickness of the amorphous layer is dependent on the beam current of the implant, and that upon millisecond annealing, results in a shallow junction that is free of end-of-range damage. The authors have also investigated other issues critical to integrating B18H22 into standard complementary metal-oxide semiconductor processing. Dose retention and sputtering of silicon have been examined using secondary-ion-mass spectroscopy for implants ranging from 50 eV to 2 keV. Of considerable concern is the ability to effectively strip photoresist from wafers without removing dopant that is placed within 1-2 nm of the surface. The use of fluorine-free downstream ashing in combination with proper wet-cleaning techniques is shown to minimize undesirable dopant loss from the cleaning process. (C) 2008 American Vacuum Society.