Earlier work has clearly shown that only a very few tools are able to measure reliably sheet resistances on advanced complementary metal-oxide semiconductor (CMOS) structures. One of these promising techniques is the junction photovoltage based technique, which uses a modulated light emitting diode to generate, in a millimeter size area of a single junction isolated structure, excess carriers which are separated by the underlying electrical field, and subsequently outdiffuse laterally. From the lateral variation in junction photovoltage, one can extract in a noncontact way the sheet resistance (R-s) of the top layer and the junction leakage (L) of the junction. First, a simplified theoretical solution of the underlying diffusion equations will be presented. Next, a recently developed simulation framework will be discussed, combining the SCILAB environment with SYNOPSIS/MEDICI device simulations, allowing for the detailed study of both ideal (in agreement with the theoretical solution) and less ideal advanced CMOS structures. Using this simulation framework, new insights will be proposed relating to the capability of RsL to characterize the impact of the presence of oxide charges on the accuracy of the measurements, and the relevance of the RsL leakage value for the actual diode (device) reverse bias characteristics in the presence of an underlying halo/well implant. (c) 2008 American Vacuum Society.