The influence of As on the evolution of mask-edge defects during stressed solid phase epitaxy of two-dimensional Si+ pre-amorphized regions in patterned Si wafers was examined. Mask-edge defects similar to 60 nm deep formed at 525 degrees C for As+ implant energies of 7.5-50 keV with peak As concentration of similar to 5.0x10(20) cm(-3). Defect formation was attributed to an As-enhanced [110] regrowth rate relative to the [001] regrowth rate creating an amorphous/crystalline interface geometry favorable for defect formation. The similarity of mask-edge defect depths with As+ implant energy was attributed to surface retardation of [110] regrowth in shallow implants and enhanced [001] regrowth in deeper implants. Results indicate stress effects on regrowth rates are small compared to dopant effects. (c) 2008 American Vacuum Society.