Metamorphic growth of In0.15Ga0.85Sb on a GaSb substrate is reported using InxGa1-xSb buffer layers compositionally graded in steps of x = 0.03. All layers were grown using gas source molecular beam epitaxy with a fixed Sb flux providing an excess group-V overpressure. The growth temperature was varied from 450 to 540 degrees C. X-ray diffraction analysis was used to determine the effect of growth temperature on relaxation and residual strain. As the growth temperature is increased, cross-sectional transmission electron microscopy (TEM) shows that the number of dislocations threading through the metamorphic layer are reduced. Plan-view TEM yields misfit dislocation density around 108 cm(-2) and from atomic force microscopy, the surface roughness is similar to 1 nm. Both surface roughness and dislocation density improves with higher growth temperature. Finally, p-i-n homojunction diodes of various sizes on metamorphic layers were demonstrated. (C) 2008 American Vacuum Society.