Nanocrystalline hydrogenated silicon carbide: germanium alloy (nc-SiC:Ge:H) films have been deposited by hot-wire chemical vapor deposition at a low substrate temperature of about 300 degrees C. Germanium incorporation into the films and film structure based on cubic silicon carbide were confirmed by X-ray photoelectron spectroscopy and X-ray diffraction. Optical absorption spectra of the films with a germanium mole fraction of about 2% shifted to lower energies by about 0.2 eV compared with that of nanocrystalline cubic silicon carbide films. (C) 2007 Elsevier B.V. All rights reserved.