Thin Solid Films, Vol.516, No.5, 758-760, 2008
Amorphous Si1-xCx : H films prepared by hot-wire CVD using SiH3CH3 and SiH4 mixture gas and its application to window layer for silicon thin film solar cells
B-doped hydrogenated amorphous silicon carbon (a-Si1-x,C-x:H) films have been prepared by hot-wire CVD (HWCVD) using SiH3CH3 as the carbon source gas. The optical bandgap energy and dark conductivity of the film are about 1.94 eV and 2 x 10(-9) S/cm, respectively. Using this film as a window layer, we have demonstrated the fabrication of solar cells having a structure of the textured SnO2(Asahi-U)/a-Sil(1-x)C(x):H(p)/a-Si1-xCx: H(buffer)/a-Si:H(i)/mu c-Si:H(n)/Al. The conversion efficiency of the cell is found to be 7.0%. (c) 2007 Elsevier B.V All rights reserved.