We demonstrate the fabrication of semi-transparent pentacene-based thin-film transistors (TFTs) with thin poly-4-vinylphenol (PVP)/high-k yttrium oxide (YOx) double gate dielectric layers and also with thermally-evaporated NiOx source/drain (S/D) electrodes which show a transmittance of similar to 30-40% and sheet resistance range of 100-200 Omega/square (controlled by deposition rate). Our pentacene TFTs with PVT (45 nm)/YOx (100 nm) layers operated at less than - 5 V, exhibiting a decent saturation mobility (maximum 0.83 cm(2)/Vs) and on/off current ratios of 10(4). When the sheet resistance of our semi-transparent NiOx electrode increased from 100 Omega/square to 200 Omega/square, the field mobility of our TFT decreased but was found to be still effective as 0.32 cm(2)/Vs. (C) 2007 Elsevier B.V. All rights reserved.