High dielectric materials have gained an important position in microwave electronics by reducing the size and cost of components for a wide range of applications from mobile telephony to spatial communications. Ba(Zn1/3Ta2/3)O-3 (BZT) is an A(B'B '')O-3 type perovskite material, showing ultra high values of the quality factor Q. Ceramic-based BZT dielectric materials were prepared by solid state reaction. The samples were sintered at temperatures in the range 1400 divided by 1600 degrees C for 4 h. Compositional, structural and morphological characterization were performed by using XRD, SEM and EDX analysis. The dielectric properties were measured in the microwave range (6 divided by 7 GHz). An additional annealing at 1400 degrees C for 10 h has improved some dielectric parameters. For samples sintered at temperatures higher than 1500 degrees C, the permittivity values were obtained in the interval 30 divided by 35 and almost do not change the value after the annealing. The Q x f product substantially increases up to about 135,000 GHz, exhibiting a low temperature coefficient of the resonant frequency (tau(f)) in microwaves. The best parameters were obtained for the samples sintered at 1600 degrees C with additional annealing. The achieved high values of the Q x f product recommend these materials for microwave and millimeter wave applications. (C) 2007 Elsevier B.V. All rights reserved.