A colossal electroresistance (CER) multilayered chip device composed of polycrystalline 0.8-at% La-doped SrTiO3 and Pd electrodes has been successfully fabricated. Polycrystalline SrTiO3 devices exhibit large hysteresis in their current-voltage (I-V) characteristics after the forming process. Further, their resistance states can be switched by applying voltage pulses above +/- 50 V, and the resistance changes by approximately two orders of magnitude (from similar to 600 Omega to similar to 80 k Omega). These resistance-switching behaviors demonstrate that even ceramics can exhibit resistance changes as large as thin-film devices and provide the possibility of new switching devices with the memory effect composed of ceramics.