This paper describes realization and characterization of SrTiO3 (STO) high K MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors in order to realize a high pass filter. Surface capacitance achieved is 10 n F/mm(2) with capacitance value of 1.2 nF. The process for STO MIM fabrication does not exceed 400 degrees C, which is compatible with interconnections. Typical K and dielectric losses values obtained are, respectively 110% and 2%. Yield obtained reaches 83% for capacitors. A functional high pass filter using these STO capacitors was realized in this study. It exhibits a cut-off frequency at 6.5 kHz and a constant gain at higher frequencies of -1.3 dB. (c) 2007 Elsevier Ltd. All rights reserved.