We demonstrate a very low-power CMOS LNA for ultra-wideband (UWB) applications using current-reused structure. The LNA is fabricated in a 0.18 mu m 1P6M standard CMOS process. The IC prototype achieves a power gain of 9-11.5 dB, a noise figure (NF) of 5-5.6 dB, and the input/output return loss is higher than 8.6/8 dB, while only 9.4 mW power consuming from 3.1 to 10.6 GHz. (C) 2007 Elsevier Ltd. All rights reserved.