A simple and high-performance area efficient body-tied-source (BTS) contact for SOI MOSFET is presented. By simple modification to the physical layout and without introducing any increase to the fabrication process steps, the proposed body contact can be implemented. Three-dimensional (3D) non-isothermal simulation on SOI CMOS devices showed higher current drive while floating body effects were completely suppressed. In addition, improved performance is achieved when comparing on-resistance (R-ON) and breakdown voltage (V-BR) with the conventional BTS structures. The new body contact structure is applicable to both low and high voltage (planar or trench) SOI and bulk devices. Experimental results obtained from fabricated bulk MOSFET devices utilizing the proposed body contact structure agreed well with the simulation findings. (c) 2007 Elsevier Ltd. All rights reserved.