진공증착 중합법에 의해 제조된 폴리이미드 박막의 내열 및 전기적 특성

이봉주; 김형권; 김영봉; 박광현; 이덕출

Polymer(Korea), Vol.21, No.4, 682-688, July, 1997

Export Citation

진공증착 중합법에 의해 제조된 폴리이미드 박막의 내열 및 전기적 특성

Heat-Resistant and Electrical Properties of Polyimide Thin Film by Vapor Deposition Polymerization Method

이봉주, 김형권, 김영봉, 박광현, 이덕출

초록

건식법인 진공증착 중합법에 의해 폴리이미드 박막을 제조하고, 이 폴리이미드 박막이 반도체 분야에서 절연막으로 응용되는가를 연구하였다 본 연구실에서 제작한 진공증착 중합장치로 PMDA (pyromellitic dianhydride)와 DDE (4,4'-diaminodipheny1 ether) 단량체로 폴리아믹산 박막을 형성할 수 있었고, 이를 열경화함으로처 폴리이미드 박막이 형성되었다 이때 열경화 온도는 300 ℃가 최적이고 폴리이미드 박막의 20000시간 동안 견딜 수 있는 온도는 대략 230 ℃임을 예측할 수 있고, 주파수 10kHz와 25 ℃∼200 ℃ 온도영역에서 비유전율은 3.9∼3.5, 유전정접은 0.008이며, 저항율과 절연파괴 강도는 각각 3.2×10¹⁵Ωcm, 4.61 MV/cm이다.

Thin films of polyimide(Pl) were fabricated by vapor deposition polymerization method (VDPM) of dry processes and studied in the aspect of insulator characteristic for applications in the semiconductor devices. Polyamic acid (PAA) thin films fabricated by vapor deposition polymerization (VDP) from PMDA (pyromellitic dianhydride) and DDE (4,4'-diaminodiphenyl ether) were changed to PI thin films by thermal curing. The curing temperature was 300 ℃ and PI can be endured at 230 ℃ for 20000 hr. It exhibited the relative permittivity of 3.9-3.5 and dissipation loss factor of 0.008 at frequency of 10 ㎑ in the temperature range from 25 ℃ to 200 ℃. The resistivity was approximately 3.2×10¹⁵Ωcm and the dielectic breakdown strength was 4.61 MV/cm.

Keywords:polyimide(PI);vapor deposition polymerization method(VDPM);insulator

[References]

Wilson AM, "Polyimides: Synthesis, Characterization and Applications," ed. by K.L. Mittal, vol. II, p. 715, Plenum, New York and London (1980)
Takahashi Y, Iijima M, Inagawa K, Itoh A, J. Vac. Sci. Technol. A, 5(4), 2253 (1987)
Kim HG, Lee DC, J, Kieeme, 9(8), 776 (1996)
Takekoshi T, "Polyimides: Fundamentals and Application," ed. by M.K. Ghoh, p. 18, Marcel Dekker, New York (1996)
Ito Y, Hikita M, Kimura T, Mizutani T, Jpn. J. Appl. Phys., 29(6), 1128 (1990)
Salem JR, Sequeda FO, Duran J, Lee WY, J. Vac. Sci. Technol. A, 4(3), 369 (1986)
Brown GP, Haarr DT, Metlay M, IEEE Trans. Electr. Insul., EI-8(2), 36 (1973)
Satou H, Suzuki H, Makino D, "Polyimides," ed. by D. Wilson, p. 230, Chapman & Hall, U.S.A. (1990)
Klein N, IEEE Trans. Electron Devices, ED-13(11), 788 (1966)

[1] Wilson AM, "Polyimides: Synthesis, Characterization and Applications," ed. by K.L. Mittal, vol. II, p. 715, Plenum, New York and London (1980)

[2] Takahashi Y, Iijima M, Inagawa K, Itoh A, J. Vac. Sci. Technol. A, 5(4), 2253 (1987)

[3] Kim HG, Lee DC, J, Kieeme, 9(8), 776 (1996)

[4] Takekoshi T, "Polyimides: Fundamentals and Application," ed. by M.K. Ghoh, p. 18, Marcel Dekker, New York (1996)

[5] Ito Y, Hikita M, Kimura T, Mizutani T, Jpn. J. Appl. Phys., 29(6), 1128 (1990)

[6] Salem JR, Sequeda FO, Duran J, Lee WY, J. Vac. Sci. Technol. A, 4(3), 369 (1986)

[7] Brown GP, Haarr DT, Metlay M, IEEE Trans. Electr. Insul., EI-8(2), 36 (1973)

[8] Satou H, Suzuki H, Makino D, "Polyimides," ed. by D. Wilson, p. 230, Chapman & Hall, U.S.A. (1990)

[9] Klein N, IEEE Trans. Electron Devices, ED-13(11), 788 (1966)