Electrochemical wet stamping (E-WETS) was applied for selective deposition of Cu on n-Si(1 1 1) using an agarose stamp. The agarose stamp was first prepared by molding against a master with an array of depressions using its property of plasticity. Cu microstructures were then fabricated directly by preferential electrochemical deposition involving contact between the stamp and a n-Si(1 1 1) workpiece. The gel stamp behaves as a current flow channel between the working electrode and the counter electrode. Furthermore, it simultaneously supplies electrolyte to preferential parts of the n-Si surface. Cu microstructures complementary of those on the master were patterned on the workpiece. The lateral deviation of the fabricated microstructures from those on the master was approximately 0.6%. (C) 2008 Elsevier Ltd. All rights reserved.