We demonstrate the possibility to use near field optics to perform two-dimensional dopant profiling on silicon surface, with deep submicron spatial resolution. The sample surface is contacted by an aqueous electrolyte giving a reverse biased junction that is illuminated by a subwavelength optical source, in near filed conditions. A staircase calibration structure was used with several boron-doped layers with either 4 mu m or 0.4 mu m thickness and doping between 10(17) and 10(20) at/cm(3). Measurements were performed on the sample cross section. It is shown that photocurrent surface mapping shows up the doped areas with a lateral resolution better than 100 nm. (c) 2007 Elsevier B.V. All rights reserved.