Phosphorous rich BP in thin film form was deposited onto fused silica substrates by co-evaporating boron (99.99%) and phosphorous (99.995%) from a tantalum boat and indirectly heated alumina crucible, respectively. Schottky diode structures for n-type BP (Al/n-BP/Sb) were fabricated out of these films. Corresponding current-voltage and capacitance-voltage characteristics of the Schottky diodes were recorded and analyzed in the light of the existing theories. (C) 2007 Elsevier B.V. All rights reserved.