We report the effects of annealing at 925 and 1050 degrees C in argon ambient on the resistivity, average residual stress, and strain gradient of highly doped polycrystalline 3C-SiC films deposited at 800 degrees C and 170 mTorr from 1,3-disilabutane, dichlorosilane, and ammonia. Residual stress shifts from -569 to 274 MPa, compressive strain gradient shifts from 4x10(-4) to -0.018 mu m(-1), and resistivity shifts from -0.037 to 0.030 Omega cm. Characterization of the SiC films reveals that oxygen impurity diffusion from the ambient during annealing and a change in bonding of nitrogen dopant atoms are sources of the shifts in these properties.