Stabilized a-Se films deposited at sufficiently low substrate temperatures are n-like in which electrons can drift but holes are deeply trapped. Such layers can be conveniently incorporated in a multilayer a-Se detector structure to block the injection of holes from the positive electrode. We have shown that a simple double-layer detector structure based on a cold deposited n-layer (which is then annealed) on which an i-like layer is grown can have dark current densities lower than 10(-10) A cm(-2) at a field of 10 V/mu m. The dark current depends on the thickness of the n-like layer. An a-Se X-ray detector for slot scanning was fabricated by having the i-n a-Se photoconductor structure coated onto a CCD chip. The latter detector was shown to have excellent resolution with a modulation transfer function remaining above 0.5 up to a spatial frequency of 11-14 lp mm(-1). (c) 2007 Elsevier B.V. All rights reserved.