A new method is proposed to quantify the local dislocation spacings on sections displaying the intersections of dislocation lines. The method was applied to dislocation structures in single crystals of CaF2 introduced by deformation at elevated temperature and made visible by etch pits. The method yields the frequency distributions and the spatial distributions of dislocation spacings. For cellular dislocation structures the method provides a quantitative and objective characterization in terms of frequency distribution of dislocation spacings in cell boundaries and cell interiors and of cell size.