The current status of sublimation growth of aluminum nitride (AlN) bulk crystals is discussed. Growth of AlN single-crystal layers on silicon carbide (SiC) seeds in pre-carbonized tantalum crucibles in graphite equipment and of AlN bulk crystals on the AlN layers in tungsten crucibles and equipment is considered. All stages of the technology, including pre-growth processing (preparation of durable crucibles, high-purity AlN sources, and high-quality seeds), seeding on SiC and AlN, growth of bulk AlN crystals, and post-growth processing (calibration, slicing, lapping, polishing, and characterization of the crystals) are described. Special attention is given to "scaling" the technology to grow large-diameter (up to 2 in) AlN crystals, in which connection seeding on large-diameter SiC substrates and lateral overgrowth of the crystals are considered. (C) 2007 Elsevier B.V. All rights reserved.