The meniscus shape dependence on the pressure difference is determined on the basis of analytical and numerical studies in the case of single crystals grown on the ground by the dewetted Bridgman method for classical semiconductors grown in uncoated ampoules (i.e. Young wetting angles theta(c) and growth angles alpha(e) satisfy the inequality alpha(e) +theta(c) <180 degrees). The pressure interval permitting to get dewetting and the corresponding meniscus shapes are calculated for InSb and GaSb crystals grown in silica ampoules and compared to experimental data. The results are useful for in situ control of the process and show the importance of a careful calculation of the meniscus shapes for the optimization of a stable dewetted Bridgman growth. (C) 2008 Elsevier B.V. All rights reserved.