Angle-resolved X-ray photoelectron spectroscopy (ARXPS) analysis has been performed on GaAs (10 0) surfaces in different conditions as naturally oxidized, Ar+ ion sputtering (E = 1-5 keV) and chemical etching in H2SO4/H2O2/H2O(3: 1: 1). The most sensitive angle to the surface compositional changes was the take-off angle (TOA): 25 degrees. Native oxide phases on GaAs consist of a mixture of Ga2O3, As2O3 and As2O5. Ar+ ion sputtering procedure modifies the surface composition, in the altered layer where the concentration ratio C-Ga/C-As tends to 1.5-1.6. Wet chemical etching removes the oxide layer and the As-rich region from the surface. In the experiment combining chemical etching with Ar+ ion sputtering for cleaning purpose, the native oxides are removed from the surface and C-Ga/C-As tends to stoichiometry. The experiment on native oxide reconstruction after storage in high-vacuum conditions (P similar to 10(-8) Torr) provides evidence of the high reactivity of GaAs (10 0) surfaces. We have observed the presence of an As oxide (BE = 43 eV) within a concentration range of 2-3%. (C) 2007 Elsevier B.V. All rights reserved.