Ce substituted Bi1-xCex,FeO3(BCFO) films with x = 0-0.15 were deposited on indium tin oxide (ITO)/glass substrates by sol-gel process annealed at 500 degrees C. Rhombohedral phase was confirmed by XRD study and no impure phases were observed till x = 0.15. Substantially enhanced ferroelectricity was observed at room temperature due to the substitution of Ce. In the films with x = 0.05 and 0.10, the double remnant polarization are 75.5 and 57.7 mu C/cm(2) at an applied field 860kV/cm. Moreover, the breakdown field was enhanced in the films with Ce substitution. (c) 2008 Elsevier B.V. All rights reserved.