Here, we report the exploration of Ba3N2 as a new flux to grow GaN single crystals from a Ga melt at 900 degrees C and under a nitrogen pressure of about 2 atm. Scanning electron microscope (SEM) observations indicated that regular pyramidal crystals with a size of 10-20 mu m were obtained. Raman scattering measurement confirmed the axial direction of crystals as the c-direction. Morphological features of crystals were compared with that of GaN crystals grown by using Li3N, Na and Ca3N2 flux. These results prove that Ba3N2 is an effective new flux for growing GaN crystals. (c) 2008 Elsevier B.V. All rights reserved.