The chemical solution deposition method as a useful method for preparation of oxide films was used to fabricate La0.7Sr0.3MnO3 films on Si (10 0) substrates with a LaNiO3 buffer layer. The XRD results of La0.7Sr0.3MnO3/LaNiO3/Si and La0.7Sr0.3MnO3/Si films showed that the LaNiO3 buffer layer is beneficial for the crystallization of the La0.7Sr0.3MnO3 films. Moreover, the resistivity was largely decreased and the insulator-metal transition temperature was increased. Additionally, the MR was changed due to the existence of the LaNiO3 buffer layer. (c) 2008 Elsevier B.V. All rights reserved.