Al-N co-doped ZnO films were fabricated by gaseous ammonia annealing at various temperatures. The structure and the electrical properties of Al-N-doped ZnO films strongly depend on the annealing temperature. XRD and SEM analysis indicate that the ZnO films possess a good crystallinity with c-axis orientation, uniform thickness and dense surface. Optical transmission spectra show a high transmittance (similar to 85%) in the visible region. Hall measurement demonstrates that ZnO films have p-type conduction with high carrier concentration of 8.3 x 10(18) cm(-3) and low resistivity of 25.0 Omega cm when the annealing temperature is 700 degrees C. Also the growth process of Al-N co-doped at various temperatures is discussed in detail. (c) 2008 Elsevier B.V. All rights reserved.