Applied Surface Science, Vol.254, No.16, 5034-5038, 2008
A spectroscopic ellipsometric investigation of new critical points of Zn1-xMnxS epilayers
Zn1-xMnxS epilayers were grown on GaAs ( 1 0 0) substrates by hot-wall epitaxy. X-ray diffraction (XRD) patterns revealed that all the epilayers have a zincblende structure. The optical properties were investigated using spectroscopic ellipsometry at 300 K from 3.0 to 8.5 eV. The obtained data were analyzed for determining the critical points of pseudodielectric function spectra, = + i