This investigation describes experiments on two sizes of p-channel metal-oxide-semiconductor field-effect-transistors (pMOSFETs), to study the negative bias temperature instability (NBTI) and hot-carrier (HC) induced degradation. This work demonstrates that the worst condition for pMOSFETs under HC tests occurs in CHC (channel HC, stressed at V-g = V-d) mode at high temperature. This study also shows that the worst degradation of pMOSFETs should occur in NBTI. This inference is based on a comparison of results for forward saturation current (I-ds,I-f) and reverse saturation current (I-ds,I-r) obtained in NBTI and HC tests. (C) 2008 Published by Elsevier B. V.