An evaluation of a low temperature method (similar to 400 degrees C) for synthesis of nitrogen incorporated hafnia gate dielectric has been reported. This method is based on metal film growth in ammonia ambient and subsequent oxidation under ultraviolet (UV) irradiation. X-ray photoelectronic spectroscopy confirmed the presence of nitrided interface layer with a thickness of similar to 12 angstrom . Equivalent oxide thickness values of around 11.5 angstrom and leakage current densities lower than 1 x 10 (4) A/cm(2) at an operation voltage (-1 V) were achieved. The post deposition ultraviolet oxidation process was performed to check the interface oxidation resistance. The interface growth rate showed that as the interface bonding characteristics changed from Si-N to Si-O predominant bonding system of nitrogen incorporated films, the activation energy for oxygen diffusion changed from 18.0 kJ/mol to 9.8 kJ/mol and the activation energy of undoped hafnia films was 2.3 kJ/mol in every growth region. (C) 2008 Elsevier B. V. All rights reserved.