화학공학소재연구정보센터
Applied Surface Science, Vol.254, No.23, 7723-7727, 2008
Influence of the vacuum level upon the growth of carbon nanotubes on silicon carbide surface
We have investigated the influence of the vacuum level upon the growth of carbon nanotubes (CNTs) on 6H-SiC (0 0 0 (1) over bar) surface. CNTs of about 160 nm in length were formed densely and uniformly on the 6H-SiC surface during annealing at 1700 degrees C in a high vacuum (similar to 10(-2) Pa). CNTs of about 1 mu m in length were formed during annealing at 1700 degrees C in an ultra-high vacuum (similar to 10(-7) Pa). However, CNTs were not formed and SiO2 layers were formed on the SiC surface at 1700 degrees C in air. It is found that longer CNTs can grow up in an ultra-high vacuum, moreover, a little aligned and low-density graphite layers, or carbon nanofibers can also grow up. (C) 2008 Elsevier B.V. All rights reserved.