Over the last decade, high precision dosimetry protocols have been developed to support ion implant metrology for process control. The demonstrated protocols for general purpose magnetic sector and quadrupole instruments can routinely deliver short term sample-to-sample repeatability on the order of <1%. This precision is acceptable for matching multiple implanters to a common reference standard. One major drawback of these standard protocols is the relatively long analysis time and the serial sample introduction required by most dynamic SIMS tools. In order to overcome these limitations we expanded the task to TOF-SIMS instruments working in an unattended, automated mode with multiple sample loading. This combines the high analytical flexibility of TOF-SIMS with the high precision needed for implant dosimetry. In this work we review the key instrumental parameters that influence the precision of dose measurements by TOF-SIMS. Optimization and control of these parameters will be presented in the form of an analysis protocol that allows full unattended operation with automated data processing. Data will be presented showing run-to-run R.S.D. for P, B and As below 0.5%. (C) 2008 Elsevier B.V. All rights reserved.