A report on the preparation of p-type As-doped ZnO ( ZnO: As) thin. lms on glass substrate by E-beam evaporation technique is presented. Hall measurement showed that the as-grown. lms were found to be n-type and the conduction was converted to p-type on annealing in Ar ambient. The. lms annealed at 400 degrees C in Ar ambient exhibited the hole concentration of 3.63 x 10(17) cm(3), resistivity of 4.08 Omega cm and hole mobility of 4.21 cm(2)/V s, respectively. X-ray photoelectron spectroscopy measurement revealed that the As in the. film is in oxidized state. As-related acceptor state is identified from neutral acceptor bound exciton (A(0), X) and donor-acceptor-pair (DAP) emissions using low temperature photoluminescence. (C) 2008 Elsevier B. V. All rights reserved.