Abrasive particles are key components in slurries for chemical mechanical polishing (CMP). Since the particle characteristics determine surface quality of wafers during polishing, in this research, novel abrasive composite particles have been developed. These composite particles contain nanoparticles of ceria dispersed within cross-linked, polymeric microspheres such that the average mass fraction of ceria is approximately 50% in the particles. The microspheres are formed by co-polymerization of N-isopropylacrylamide (NIPAM) with 3-(trimethoxysilyl) propyl methacrylate ( MPS) and contain interpenetrating (IP) chains of poly(acrylic acid) (PAAc). Infrared spectroscopy, dynamic light scattering, and transmission electron microscopy are employed to characterize the composite particles. Planarization of silicon dioxide wafers is studied on a bench-top CMP tester and the polished surfaces are characterized by ellipsometry, atomic force and optical microscopy. Slurries formed from the composite ceria-polymer particles lead to lower topographical variations and surface roughness than slurries of only ceria nanoparticles even though both slurries achieve similar removal rates of similar to 100 nm/min for similar ceria content. Polishing with the novel composite particles gives surfaces devoid of scratches and particle deposition, which makes these particles suitable for the next generation slurries in CMP. (C) 2008 Elsevier B.V. All rights reserved.