Sn-doped Ga1.4In0.6O3 films have been prepared on alpha-Al2O3 (0 0 0 1) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The Sn-doping was varied from 0% to 7% (atomic ratio). Polycrystalline films with resistivity of 4.9 x 10 (3)Omega cm, carrier concentration of 5.9 x 10(19) cm (3) and Hall mobility of 21.4 cm(2) v (1) s (1) was obtained at 5 at.% of Sn concentration. The average transmittance for the Sn-doped Ga1.4In0.6O3 films in the visible range was over 90%. The bandgap of the films varies from 3.85 to 4.21 eV. (C) 2009 Elsevier B.V. All rights reserved.