A structure of Cu/ITO(10 nm)/Si was first formed and then annealed at various temperatures for 5 min in a rapid thermal annealing furnace under 10(-2) Torr pressure. In Cu/ITO(10 nm)/Si structure, the ITO(10 nm) film was coated on Si substrate by sputtering process and the Cu film was deposited on ITO film by electroplating technique. The various Cu/ITO(10 nm)/Si samples were characterized by a four-point probe, a scanning electron microscope, an X-ray diffractometer, and a transmission electron microscope. The results showed that when the annealing temperature increases near 600 degrees C the interface between Cu and ITO becomes unstable, and the Cu3Si particles begin to form; and when the annealing temperature increases to 650 degrees C, a good many of Cu3Si particles about 1 mm in size form and the sheet resistance of Cu/ITO(10 nm)/Si structure largely increases. (C) 2009 Elsevier B. V. All rights reserved.