Fabrication of FeSi2 nano- and microdot array was performed by utilizing droplet ejection through laser-induced forward transfer, which we named laser-induced dot transfer (LIDT). An amorphous FeSi2 alloy source film on a transparent support was illuminated from the support by a nanosecond excimer laser pulse patterned into migcrogrid form, resulting in size- and site-controlled dot deposition. Micro-Raman spectroscopy confirmed beta-FeSi2 semiconducting crystalline phase even on unheated substrates. Moreover, the microdots exhibited near-infrared photoluminescence at the peak wavelength of 1.57 mu m, which comes from the beta-FeSi2 crystalline phase precipitated during the LIDT process. The dot size was successfully reduced to approximately 500 and 300 nm in diameter and height, respectively. This technique is useful for integrating functional nano-and microdots under atmospheric room-temperature conditions. (C) 2009 Elsevier B.V. All rights reserved.