Hexabenzocoronene (HBC) nanotubes, prepared by self-assembly of 1-4 with different oligoether chains, all show a p-type conducting profile in a field-effect transistor (FET) setup, where hole mobilities of their film samples are two orders of magnitude greater than that of a cast film composed of ill-defined, nontubular HBC aggregates. Taking into account their time-resolved microwave conductivities, the observed FET properties appear to be largely affected by the kinetics of intertubular hole hopping, which could be less facilitated as the oligoether chains on the nanotube surface are longer.