This paper describes a no-bias-bend (NBB) pi cell based on a homeotropic polyimide layer with a midrange pretilt angle produced using the nonrubbing ion-beam (IB) method. Various pretilt angles in the range 1-89 degrees were easily achieved depending on the IB exposure time. A chemical structure analysis confirmed that preferential reorientation of the carbon network was created by selectively breaking the weakest pi bonds of the C=O double bonds. The threshold voltage and favorable response time of the NBB pi cell without an initial critical voltage were 0.7 V and 6.6 ms. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.2990221] All rights reserved.