Platinum and platinum oxide films were deposited by remote plasma atomic layer deposition (ALD) from the combination of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) precursor and O-2 plasma. A short O-2 plasma exposure (0.5 s) resulted in low resistivity (15 mu Omega cm), high density (21 g/cm(3)), cubic Pt films, whereas a longer O-2 plasma exposure (5 s) resulted in semiconductive PtO2 films. In situ spectroscopic ellipsometry studies revealed no significant nucleation delay, different from the thermal ALD process with O-2 gas which was used as a benchmark. A broad temperature window (100-300 degrees C) for remote plasma ALD of Pt and PtO2 was demonstrated.