Electroluminescence (EL) consisting of three bands at 500, 600, and 760 nm, respectively, is observed from the 30 nm SiO2 implanted with Ge ions at low energies. The EL intensity under either constant-voltage or constant-current injection is significantly enhanced by higher implant energy. It is shown that the EL enhancement is partially due to the enhanced current conduction as a result of the change in Ge distribution. The external quantum efficiency also increases with implant energy. The phenomenon is attributed to the increase of implant-generated luminescence centers in the oxide, which is supported by the stopping-and-range-of-ions-in-matter simulation of defect generation.