Cu(In,Ga)(S,Se)(2) thin films have been prepared using a low cost two-step growth process, which involves the electrodeposition of a Cu(In,Ga)Se-2 precursor, followed by annealing in H2S atmosphere. From X-ray diffraction results, an expected shift of the (112) reflection with S and Ga incorporation into the chalcopyrite structure was observed. Glancing incident angle X-ray diffraction analysis demonstrated an inhomogeneous structure with increasing lattice constant from top to bottom of the film, associated with a change in composition from Cu-poor to Cu-rich in the depth direction confirmed by Auger electron spectroscopy.