We have successfully demonstrated low voltage operation of metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]/Al2O3/p-Si(100) structures. P(VDF-TrFE) copolymer thin films (thickness of 20 nm) prepared by the spin-coating method and annealed at 140 degrees C showed good ferroelectric behavior with a remnant polarization of 1 mu C/cm(2) at a voltage sweep of +/- 4 V. Remarkable reduction in leakage current was realized by introducing a 5 nm thick Al2O3 layer grown by atomic layer deposition. In capacitance-voltage measurements, MFIS capacitors showed rectangular-shaped hysteresis curves, attributed to the ferroelectric material, in which the memory window width was 1.5 V, even at applied voltages of +/- 3 V.