The cathodic electrodeposition of polycrystalline zinc telluride from aqueous acidic solutions of zinc sulphate and tellurite, under constant or pulsing voltage, is described. Various compositions of the bath were tested with respect to the Zn/Te precursor ratio, including addition of citrate buffer as a complexation agent. Metallic (Ni and Ti) and semiconductor (CdTe and CdSe) electrodes were used as cathode-substrates. The deposits were characterized by XRD, SEM-EDX and FTIR techniques. The formation of compact barrier layers of zinc blend, stoichiometric ZnTe or mixed (Zn.Cd)Te was attained. Pulse plating in a citrate-free bath and constant potential plating from a citrate bath were seen to have the most beneficial effect on the properties of the electrodeposits, as leading to improved microstructure of the ZnTe films, in terms of crystallinity and stoichiometry. Further, the employment of [111]-oriented CdTe or CdSe substrates featured an epitaxial growth of polycrystalline ZnTe films as well as an improved Zn/Te atomic ratio compared to the metallic substrates. (C) 2008 Elsevier Ltd. All rights reserved.